适用于扇出型封装工艺的钛种子层蚀刻液

LtF E-53

Chemicals
Semiconductor
Stripping
Titanium

LtF E-53

LtF E-53 是一种用于扇出型封装工艺的钛种子层蚀刻液。

◆特点
1. LtF E-53 是一种以过氧化氢为基础制成的钛种子层蚀刻液
2. 浸泡处理时的蚀刻速率为:25℃ 时约 30 nm/min,40℃ 时约 85 nm/min
3. 对钛具有高度选择性蚀刻,对铜、铝、锡及焊料等其他材料腐蚀性极低
4. 不含对环境有害的物质

RDL pattern after Ti etching (L/S=2/2 μm)

RDL pattern after Ti etching (L/S=2/2 μm)
Selective etching of titanium achieves copper pattern formation with smooth and flat surface.

Cross section of RDL after Ti etching

Cross section of RDL after Ti etching
No undercut of copper pattern after Ti etching

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